IRF6729MTRPBF

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

63nC @ 4.5V

Turn Off Delay Time

20 ns

Yayın Yılı

2009

Montaj

Surface Mount

Terminal Kaplaması

MATTE TIN

Jesd30 Code

R-PDSO-G3

RoHS Durumu

RoHS Compliant

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.8W Ta 104W Tc

Avalanche Energy Rating Eas

260 mJ

Number Of Elements

1

Drain To Source Breakdown Voltage

30V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

15 ns

Uzunluk

6.35mm

Tepe Reflow Süresi (maks. sn)

40

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

1.8m Ω @ 31A, 10V

Kılıf / Paket

DirectFET™ Isometric MX

Yükseklik

506μm

Input Capacitance Ciss Max Vds

6030pF @ 15V

Seri

HEXFET®

Terminal Formu

GULL WING

Terminal Pozisyonu

DUAL

Montaj Tipi

Surface Mount

Genişlik

5.05mm

Vgsth Max Id

2.35V @ 150μA

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

Turn On Delay Time

22 ns

Pin Sayısı

5

Case Connection

DRAIN

Transistor Application

SWITCHING

Vgs Max

±20V

Terminal Sayısı

3

Radyasyon Dayanımı

No

Current Continuous Drain Id25

31A Ta 190A Tc