IRF6726MTR1PBF

Specifications

Çalışma Sıcaklığı

-40°C~150°C TJ

Number Of Elements

1

Dual Supply Voltage

30V

Transistor Application

SWITCHING

Jesd30 Code

R-XBCC-N3

Uzunluk

5.45mm

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Transistor Element Material

SILICON

Threshold Voltage

1.7V

Nominal Vgs

1.7 V

Input Capacitance Ciss Max Vds

6140pF @ 15V

Turn Off Delay Time

25 ns

Vgs Max

±20V

Fet Type

N-Channel

Rds On Max Id Vgs

1.7m Ω @ 32A, 10V

Case Connection

DRAIN

Fall Time Typ

17 ns

Genişlik

5.05mm

Yayın Yılı

2007

Continuous Drain Current Id

32A

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Power Dissipation

2.8W

Seri

HEXFET®

Terminal

SMD/SMT

Drain To Source Breakdown Voltage

30V

Pin Sayısı

7

Current Continuous Drain Id25

32A Ta 180A Tc

Montaj Tipi

Surface Mount

Recovery Time

41 ns

Vgsth Max Id

2.35V @ 150μA

Avalanche Energy Rating Eas

260 mJ

Montaj

Surface Mount

Radyasyon Dayanımı

No

Rise Time

30ns

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free