IRF6725MTRPBF

Specifications

Number Of Elements

1

Fabrika Tedarik Süresi

17 Weeks

Çalışma Sıcaklığı

-40°C~150°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

4700pF @ 15V

Nominal Vgs

1.8 V

Threshold Voltage

1.8V

Uzunluk

6.35mm

Jesd30 Code

R-XBCC-N3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Rds On Max Id Vgs

2.2m Ω @ 28A, 10V

Fet Type

N-Channel

Vgs Max

±20V

Turn Off Delay Time

19 ns

Fall Time Typ

13 ns

Case Connection

DRAIN

Yayın Yılı

2004

Continuous Drain Current Id

170A

Genişlik

5.05mm

Drain Currentmax Abs Id

28A

Montaj Tipi

Surface Mount

Pin Sayısı

5

Current Continuous Drain Id25

28A Ta 170A Tc

Montaj

Surface Mount

Vgsth Max Id

2.35V @ 100μA

Avalanche Energy Rating Eas

190 mJ

Power Dissipation

100W

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Drain To Source Breakdown Voltage

30V

Seri

HEXFET®

Power Dissipation Max

2.8W Ta 100W Tc

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Obsolete

Radyasyon Dayanımı

No

Rise Time

22ns