IRF6724MTRPBF

Specifications

Montaj

Surface Mount

Vgsth Max Id

2.35V @ 100μA

Avalanche Energy Rating Eas

12 mJ

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Pin Sayısı

5

Current Continuous Drain Id25

27A Ta 150A Tc

Montaj Tipi

Surface Mount

Drain To Source Breakdown Voltage

30V

Seri

HEXFET®

JESD-609 Kodu

e1

Configuration

SINGLE WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Power Dissipation

89W

Çalışma Sıcaklığı

-40°C~150°C TJ

Input Capacitance Ciss Max Vds

4404pF @ 15V

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Terminal Sayısı

3

Power Dissipation Max

2.8W Ta 89W Tc

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Rise Time

19ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Uzunluk

6.35mm

Radyasyon Dayanımı

No

Jesd30 Code

R-XBCC-N3

Yükseklik

506μm

Rds On Max Id Vgs

2.5m Ω @ 27A, 10V

Turn Off Delay Time

23 ns

Vgs Max

±20V

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

27A

Yayın Yılı

2009

Genişlik

5.05mm