IRF6718L2TRPBF

Specifications

Drainsource On Resistancemax

0.0007Ohm

Yükseklik

508μm

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

96nC @ 4.5V

Turn On Delay Time

67 ns

Pulsed Drain Currentmax Idm

490A

Kılıf / Paket

DirectFET™ Isometric L6

Montaj

Surface Mount

Avalanche Energy Rating Eas

530 mJ

Vgsth Max Id

2.35V @ 150μA

Montaj Tipi

Surface Mount

Pin Sayısı

13

Current Continuous Drain Id25

61A Ta 270A Tc

Drain To Source Breakdown Voltage

25V

Seri

HEXFET®

Power Dissipation

4.3W

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Power Dissipation Max

4.3W Ta 83W Tc

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Obsolete

Rise Time

140ns

Radyasyon Dayanımı

No

Rds On Max Id Vgs

0.7m Ω @ 61A, 10V

Fet Type

N-Channel

Vgs Max

±20V

Turn Off Delay Time

47 ns

Additional Feature

ULTRA-LOW RESISTANCE

Yayın Yılı

2010

Continuous Drain Current Id

61A

Genişlik

7.1mm

Fall Time Typ

53 ns

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection

DRAIN

Drain Currentmax Abs Id

270A

Number Of Elements

1