IRF6717MTR1PBF

Specifications

Terminal Kaplaması

MATTE TIN

Case Connection

DRAIN

Fall Time Typ

15 ns

Genişlik

5.05mm

Yayın Yılı

2009

Continuous Drain Current Id

38A

Turn Off Delay Time

19 ns

Vgs Max

±20V

Fet Type

N-Channel

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

1.25m Ω @ 38A, 10V

Transistor Application

SWITCHING

Jesd30 Code

R-XBCC-N3

Uzunluk

5.45mm

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Transistor Element Material

SILICON

Threshold Voltage

1.8V

Nominal Vgs

1.8 V

Input Capacitance Ciss Max Vds

6750pF @ 13V

Çalışma Sıcaklığı

-40°C~150°C TJ

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Dual Supply Voltage

25V

Kılıf / Paket

DirectFET™ Isometric MX

Pulsed Drain Currentmax Idm

300A

Turn On Delay Time

25 ns

Gate Charge Qg Max Vgs

69nC @ 4.5V

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Element Configuration

Single

Yükseklik

533.4μm

Radyasyon Dayanımı

No

Rise Time

37ns

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant