IRF6716MTRPBF

Specifications

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

JESD-609 Kodu

e1

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-40°C~150°C TJ

Threshold Voltage

1.9V

Input Capacitance Ciss Max Vds

5150pF @ 13V

Terminal Sayısı

3

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Uzunluk

6.35mm

Jesd30 Code

R-XBCC-N3

Rds On Max Id Vgs

1.6m Ω @ 40A, 10V

Turn Off Delay Time

25 ns

Fet Type

N-Channel

Vgs Max

±20V

Yayın Yılı

2008

Continuous Drain Current Id

39A

Genişlik

5.05mm

Case Connection

DRAIN

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Fall Time Typ

41 ns

Drain Currentmax Abs Id

180A

Montaj

Surface Mount

Vgsth Max Id

2.4V @ 100μA

Avalanche Energy Rating Eas

330 mJ

Pin Sayısı

5

Current Continuous Drain Id25

39A Ta 180A Tc

Montaj Tipi

Surface Mount

Drain To Source Breakdown Voltage

25V

Seri

HEXFET®

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Power Dissipation

78W

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Power Dissipation Max

3.6W Ta 78W Tc

Rise Time

105ns