IRF6715MTRPBF

Specifications

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection

DRAIN

Gate To Source Voltage Vgs

20V

Fall Time Typ

12 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

34A

Yayın Yılı

2011

Genişlik

5.05mm

Kılıf / Paket

DirectFET™ Isometric MX

Turn On Delay Time

20 ns

Gate Charge Qg Max Vgs

59nC @ 4.5V

Rds On Max Id Vgs

1.6m Ω @ 34A, 10V

Yükseklik

506μm

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

16 ns

Fet Type

N-Channel

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Terminal Sayısı

3

Power Dissipation Max

2.8W Ta 78W Tc

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

5340pF @ 13V

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Uzunluk

6.35mm

Jesd30 Code

R-XBCC-N3

ECCN Kodu

EAR99

Rise Time

31ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Pin Sayısı

7

Fabrika Tedarik Süresi

12 Weeks

Current Continuous Drain Id25

34A Ta 180A Tc

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Vgsth Max Id

2.4V @ 100μA

Avalanche Energy Rating Eas

200 mJ

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM