IRF6715MTR1PBF

Specifications

Element Configuration

Single

Vgs Max

±20V

Fet Type

N-Channel

Reach Svhc

No SVHC

Turn Off Delay Time

16 ns

Drain To Source Voltage Vdss

25V

Drain To Source Resistance

2.7mOhm

Input Capacitance

5.34nF

Yükseklik

508μm

Rds On Max Id Vgs

1.6mOhm @ 34A, 10V

Gate Charge Qg Max Vgs

59nC @ 4.5V

Min. Çalışma Sıcaklığı

-40°C

Turn On Delay Time

20 ns

Maks. Çalışma Sıcaklığı

150°C

Tedarikçi Cihaz Paketi

DIRECTFET™ MX

Kılıf / Paket

DirectFET™ Isometric MX

Continuous Drain Current Id

34A

Yayın Yılı

2007

Genişlik

5.05mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

12 ns

Gate To Source Voltage Vgs

20V

Drain To Source Breakdown Voltage

25V

Seri

HEXFET®

Terminal

SMD/SMT

Power Dissipation

2.8W

Çalışma Sıcaklığı

-40°C~150°C TJ

Ambalaj

Tape & Reel (TR)

Dual Supply Voltage

25V

Montaj

Surface Mount

Vgsth Max Id

2.4V @ 100μA

Recovery Time

42 ns

Rds On Max

1.6 mΩ

Montaj Tipi

Surface Mount

Number Of Elements

1

Pin Sayısı

7

Current Continuous Drain Id25

34A Ta 180A Tc

Rise Time

31ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Radyasyon Dayanımı

No