IRF6710S2TRPBF

Specifications

ECCN Kodu

EAR99

Rise Time

20ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Uzunluk

4.826mm

Radyasyon Dayanımı

No

Jesd30 Code

R-XBCC-N2

Input Capacitance Ciss Max Vds

1190pF @ 13V

RoHS Durumu

RoHS Compliant

Terminal Sayısı

2

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Power Dissipation Max

1.8W Ta 15W Tc

Drain To Source Breakdown Voltage

25V

Seri

HEXFET®

Configuration

SINGLE WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Power Dissipation

15W

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj

Surface Mount

Vgsth Max Id

2.4V @ 25μA

Avalanche Energy Rating Eas

24 mJ

Number Of Elements

1

Pin Sayısı

6

Fabrika Tedarik Süresi

15 Weeks

Current Continuous Drain Id25

12A Ta 37A Tc

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

13nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric S1

Turn On Delay Time

7.9 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

12mA

Yayın Yılı

2008

Genişlik

3.95mm

Case Connection

DRAIN

Gate To Source Voltage Vgs

20V

Fall Time Typ

6 ns

Turn Off Delay Time

5.2 ns

Vgs Max

±20V