Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 65nC @ 4.5V
- Min. Çalışma Sıcaklığı
- -40°C
- Turn On Delay Time
- 21 ns
- Maks. Çalışma Sıcaklığı
- 150°C
- Tedarikçi Cihaz Paketi
- DIRECTFET™ MX
- Kılıf / Paket
- DirectFET™ Isometric MX
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Gate To Source Voltage Vgs
- 20V
- Reach Svhc
- No SVHC
- Drain To Source Voltage Vdss
- 30V
- Yükseklik
- 506μm
- Rise Time
- 71ns
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- 30V
- Direnç
- 2.2MOhm
- Power Dissipation Max
- 2.8W Ta 89W Tc
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz
- Lead Free
- Parça Durumu
- Obsolete
- Drain To Source Breakdown Voltage
- 30V
- Terminal
- SMD/SMT
- Seri
- HEXFET®
- Power Dissipation
- 89W
- Ambalaj
- Tape & Reel (TR)
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.25V @ 250μA
- Montaj Tipi
- Surface Mount
- Current Continuous Drain Id25
- 30A Ta 150A Tc
- Pin Sayısı
- 5
- Continuous Drain Current Id
- 24A
- Yayın Yılı
- 2006
- Genişlik
- 5.05mm
- Fall Time Typ
- 8.1 ns
- Fet Type
- N-Channel
- Vgs Max
- ±20V
- Turn Off Delay Time
- 27 ns
- Drain To Source Resistance
- 3mOhm
- Input Capacitance
- 5.64nF
- Akım Değeri
- 30A
- Rds On Max Id Vgs
- 2.2mOhm @ 30A, 10V
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