IRF6674TRPBF

Specifications

Yükseklik

530μm

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

36nC @ 10V

Turn On Delay Time

7 ns

Kılıf / Paket

DirectFET™ Isometric MZ

Vgsth Max Id

4.9V @ 100μA

Avalanche Energy Rating Eas

98 mJ

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Pin Sayısı

5

Current Continuous Drain Id25

13.4A Ta 67A Tc

Seri

HEXFET®

Drain To Source Breakdown Voltage

60V

Power Dissipation

89W

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Power Dissipation Max

3.6W Ta 89W Tc

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Rise Time

12ns

Radyasyon Dayanımı

No

Rds On Max Id Vgs

11m Ω @ 13.4A, 10V

Fet Type

N-Channel

Vgs Max

±20V

Turn Off Delay Time

12 ns

Genişlik

5.05mm

Yayın Yılı

2008

Continuous Drain Current Id

67A

Fall Time Typ

8.7 ns

Case Connection

DRAIN

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

JESD-609 Kodu

e1

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-40°C~150°C TJ

Input Capacitance Ciss Max Vds

1350pF @ 25V