Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 7.4 ns
- Kılıf / Paket
- DirectFET™ Isometric SH
- Gate Charge Qg Max Vgs
- 13nC @ 10V
- Contact Plating
- Tin
- Drainsource On Resistancemax
- 0.062Ohm
- Yükseklik
- 506μm
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- Element Configuration
- Single
- Power Dissipation Max
- 2.2W Ta 42W Tc
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- 100V
- Rise Time
- 2.8ns
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 4.2A Ta 19A Tc
- Vgsth Max Id
- 5V @ 250μA
- Montaj
- Surface Mount
- Power Dissipation
- 42W
- Ambalaj
- Tape & Reel (TR)
- Terminal Pozisyonu
- BOTTOM
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 100V
- Fall Time Typ
- 4.3 ns
- Case Connection
- DRAIN
- Genişlik
- 3.95mm
- Yayın Yılı
- 2006
- Continuous Drain Current Id
- 3.4A
- Rds On Max Id Vgs
- 62m Ω @ 5A, 10V
- Akım Değeri
- 4.2A
- Additional Feature
- HIGH RELIABILITY
- Vgs Max
- ±20V
- Fet Type
- N-Channel
- Turn Off Delay Time
- 14 ns
- Transistor Element Material
- SILICON
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