Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rise Time
- 20ns
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- 80V
- Power Dissipation Max
- 2.8W Ta 89W Tc
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 80V
- Power Dissipation
- 89W
- Terminal Pozisyonu
- BOTTOM
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 4.9V @ 150μA
- Avalanche Energy Rating Eas
- 230 mJ
- Montaj
- Surface Mount
- Montaj Tipi
- Surface Mount
- Current Continuous Drain Id25
- 12A Ta 68A Tc
- Pin Sayısı
- 5
- Gate Charge Qg Max Vgs
- 50nC @ 10V
- Pulsed Drain Currentmax Idm
- 96A
- Turn On Delay Time
- 17 ns
- Kılıf / Paket
- DirectFET™ Isometric MN
- Drive Voltage Max Rds On Min Rds On
- 10V
- Gate To Source Voltage Vgs
- 20V
- Reach Svhc
- No SVHC
- Operating Mode
- ENHANCEMENT MODE
- Yükseklik
- 506μm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Jesd30 Code
- R-XBCC-N3
- Uzunluk
- 6.35mm
- Transistor Application
- SWITCHING
- Input Capacitance Ciss Max Vds
- 2060pF @ 25V
- Threshold Voltage
- 4.9V
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- JESD-609 Kodu
- e1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Fabrika Tedarik Süresi
- 12 Weeks
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