Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Surface Mount
- Current Continuous Drain Id25
- 5.7A Ta 25A Tc
- Pin Sayısı
- 7
- Montaj
- Surface Mount
- Vgsth Max Id
- 4.9V @ 50μA
- Avalanche Energy Rating Eas
- 29 mJ
- Power Dissipation
- 42W
- Terminal Pozisyonu
- BOTTOM
- Ambalaj
- Tape & Reel (TR)
- Drain To Source Breakdown Voltage
- 100V
- Seri
- HEXFET®
- Power Dissipation Max
- 2.2W Ta 42W Tc
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- 100V
- Rise Time
- 5ns
- Contact Plating
- Tin
- Drainsource On Resistancemax
- 0.035Ohm
- Yükseklik
- 410μm
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 9.2 ns
- Pulsed Drain Currentmax Idm
- 45A
- Kılıf / Paket
- DirectFET™ Isometric SJ
- Gate Charge Qg Max Vgs
- 20nC @ 10V
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 12 Weeks
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Configuration
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Kodu
- e1
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Input Capacitance Ciss Max Vds
- 890pF @ 25V
- Uzunluk
- 3.95mm
- Jesd30 Code
- R-XBCC-N3
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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