Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yükseklik
- 506μm
- Reach Svhc
- No SVHC
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Drive Voltage Max Rds On Min Rds On
- 10V
- Gate To Source Voltage Vgs
- 20V
- Gate Charge Qg Max Vgs
- 47nC @ 10V
- Kılıf / Paket
- DirectFET™ Isometric MN
- Pulsed Drain Currentmax Idm
- 228A
- Turn On Delay Time
- 17 ns
- Vgsth Max Id
- 4.8V @ 150μA
- Avalanche Energy Rating Eas
- 86 mJ
- Montaj
- Surface Mount
- Pin Sayısı
- 5
- Current Continuous Drain Id25
- 10.3A Ta 60A Tc
- Montaj Tipi
- Surface Mount
- Recovery Time
- 63 ns
- Seri
- HEXFET®
- Terminal
- SMD/SMT
- Drain To Source Breakdown Voltage
- 100V
- Ambalaj
- Tape & Reel (TR)
- Terminal Pozisyonu
- BOTTOM
- Power Dissipation
- 2.8W
- Direnç
- 13MOhm
- Parça Durumu
- Obsolete
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz
- Lead Free
- Power Dissipation Max
- 2.8W Ta 89W Tc
- Rise Time
- 26ns
- Voltage Rated Dc
- 100V
- Radyasyon Dayanımı
- No
- Akım Değeri
- 10.3A
- Rds On Max Id Vgs
- 13m Ω @ 10.3A, 10V
- Turn Off Delay Time
- 34 ns
- Vgs Max
- ±20V
- Fet Type
- N-Channel
- Additional Feature
- LOW CONDUCTION LOSS
- Genişlik
- 5.05mm
- Yayın Yılı
- 2005
- Continuous Drain Current Id
- 8.3A
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