IRF6641TRPBF

Specifications

Rds On Max Id Vgs

59.9m Ω @ 5.5A, 10V

Akım Değeri

4.6A

Fet Type

N-Channel

Vgs Max

±20V

Turn Off Delay Time

31 ns

Fall Time Typ

6.5 ns

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection

DRAIN

Yayın Yılı

2007

Continuous Drain Current Id

3.7A

Genişlik

5.05mm

Drain Currentmax Abs Id

26A

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Çalışma Sıcaklığı

-40°C~150°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e1

Transistor Element Material

SILICON

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

2290pF @ 25V

Uzunluk

6.35mm

Jesd30 Code

R-XBCC-N3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Yükseklik

506μm

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

16 ns

Pulsed Drain Currentmax Idm

37A

Kılıf / Paket

DirectFET™ Isometric MZ

Gate Charge Qg Max Vgs

48nC @ 10V

Montaj Tipi

Surface Mount

Current Continuous Drain Id25

4.6A Ta 26A Tc

Pin Sayısı

5

Montaj

Surface Mount

Avalanche Energy Rating Eas

46 mJ

Vgsth Max Id

4.9V @ 150μA

Power Dissipation

89W