IRF6638TRPBF

Specifications

Gate Charge Qg Max Vgs

45nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric MX

Turn On Delay Time

19 ns

Pulsed Drain Currentmax Idm

200A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Yükseklik

506μm

Drainsource On Resistancemax

0.0029Ohm

Rise Time

45ns

Voltage Rated Dc

30V

Radyasyon Dayanımı

No

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Power Dissipation Max

2.8W Ta 89W Tc

Drain To Source Breakdown Voltage

30V

Seri

HEXFET®

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Power Dissipation

89W

Montaj

Surface Mount

Vgsth Max Id

2.35V @ 100μA

Avalanche Energy Rating Eas

37 mJ

Tepe Reflow Süresi (maks. sn)

30

Current Continuous Drain Id25

25A Ta 140A Tc

Pin Sayısı

5

Montaj Tipi

Surface Mount

Continuous Drain Current Id

20A

Yayın Yılı

2006

Genişlik

5.05mm

Case Connection

DRAIN

Terminal Kaplaması

TIN SILVER COPPER

Fall Time Typ

6.2 ns

Turn Off Delay Time

28 ns

Vgs Max

±20V

Fet Type

N-Channel

Akım Değeri

25A

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

2.9m Ω @ 25A, 10V