IRF6637TRPBF

Specifications

Drain To Source Breakdown Voltage

30V

Seri

HEXFET®

Terminal Pozisyonu

BOTTOM

Ambalaj

Tape & Reel (TR)

Power Dissipation

89W

Montaj

Surface Mount

Vgsth Max Id

2.35V @ 250μA

Current Continuous Drain Id25

14A Ta 59A Tc

Pin Sayısı

5

Montaj Tipi

Surface Mount

Rise Time

15ns

Voltage Rated Dc

30V

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Power Dissipation Max

2.3W Ta 42W Tc

Operating Mode

ENHANCEMENT MODE

Yükseklik

506μm

Drainsource On Resistancemax

0.0077Ohm

Gate Charge Qg Max Vgs

17nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric MP

Turn On Delay Time

12 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e1

Çalışma Sıcaklığı

-40°C~150°C TJ

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Uzunluk

6.35mm

Jesd30 Code

R-XBCC-N3

Input Capacitance Ciss Max Vds

1330pF @ 15V

Terminal Sayısı

3

Transistor Element Material

SILICON

Turn Off Delay Time

14 ns

Fet Type

N-Channel