IRF6636TRPBF

Specifications

Genişlik

3.95mm

Yayın Yılı

2006

Continuous Drain Current Id

15A

Case Connection

DRAIN

Fall Time Typ

6.2 ns

Turn Off Delay Time

16 ns

Vgs Max

±20V

Fet Type

N-Channel

Akım Değeri

18A

Rds On Max Id Vgs

4.5m Ω @ 18A, 10V

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Jesd30 Code

R-XBCC-N3

Uzunluk

4.826mm

Threshold Voltage

2.45V

Input Capacitance Ciss Max Vds

2420pF @ 10V

Terminal Sayısı

3

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-40°C~150°C TJ

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Gate Charge Qg Max Vgs

27nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric ST

Turn On Delay Time

14 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Yükseklik

506μm

Rise Time

19ns

Voltage Rated Dc

20V

Radyasyon Dayanımı

No

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Power Dissipation Max

2.2W Ta 42W Tc

Seri

HEXFET®

Drain To Source Breakdown Voltage

20V