IRF6629TRPBF

Specifications

Drain Currentmax Abs Id

180A

Case Connection

DRAIN

Terminal Kaplaması

TIN SILVER COPPER

Fall Time Typ

7.4 ns

Genişlik

5.05mm

Continuous Drain Current Id

23A

Yayın Yılı

2006

Turn Off Delay Time

20 ns

Fet Type

N-Channel

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

2.1m Ω @ 29A, 10V

Akım Değeri

29A

Transistor Application

SWITCHING

Jesd30 Code

R-XBCC-N3

Uzunluk

6.35mm

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

4260pF @ 13V

Çalışma Sıcaklığı

-40°C~150°C TJ

JESD-609 Kodu

e1

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Kılıf / Paket

DirectFET™ Isometric MX

Pulsed Drain Currentmax Idm

230A

Turn On Delay Time

20 ns

Gate Charge Qg Max Vgs

51nC @ 4.5V

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Operating Mode

ENHANCEMENT MODE

Yükseklik

506μm

Drainsource On Resistancemax

0.0021Ohm

Voltage Rated Dc

25V

Radyasyon Dayanımı

No

Rise Time

67ns

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free