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Support
Technical team support
Specifications
- Turn Off Delay Time
- 20 ns
- Fet Type
- N-Channel
- Vgs Max
- ±20V
- Reach Svhc
- No SVHC
- Drain To Source Voltage Vdss
- 25V
- Input Capacitance
- 4.26nF
- Akım Değeri
- 29A
- Yükseklik
- 506μm
- Drain To Source Resistance
- 2.7mOhm
- Rds On Max Id Vgs
- 2.1mOhm @ 29A, 10V
- Gate Charge Qg Max Vgs
- 51nC @ 4.5V
- Tedarikçi Cihaz Paketi
- DIRECTFET™ MX
- Kılıf / Paket
- DirectFET™ Isometric MX
- Maks. Çalışma Sıcaklığı
- 150°C
- Turn On Delay Time
- 20 ns
- Min. Çalışma Sıcaklığı
- -40°C
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Continuous Drain Current Id
- 23A
- Yayın Yılı
- 2006
- Genişlik
- 5.05mm
- Gate To Source Voltage Vgs
- 20V
- Fall Time Typ
- 7.4 ns
- Drain To Source Breakdown Voltage
- 25V
- Terminal
- SMD/SMT
- Seri
- HEXFET®
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation
- 100W
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.35V @ 100μA
- Dual Supply Voltage
- 25V
- Current Continuous Drain Id25
- 29A Ta 180A Tc
- Pin Sayısı
- 5
- Montaj Tipi
- Surface Mount
- Rds On Max
- 2.1 mΩ
- Rise Time
- 67ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Voltage Rated Dc
- 25V
- Radyasyon Dayanımı
- No
- Nominal Vgs
- 1.8 V
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