IRF6628TR1PBF

Specifications

Terminal

SMD/SMT

Seri

HEXFET®

Drain To Source Breakdown Voltage

25V

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-40°C~150°C TJ

Power Dissipation

96W

Vgsth Max Id

2.35V @ 100μA

Montaj

Surface Mount

Dual Supply Voltage

25V

Pin Sayısı

5

Current Continuous Drain Id25

27A Ta 160A Tc

Number Of Elements

1

Rds On Max

2.5 mΩ

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

83ns

Voltage Rated Dc

25V

Radyasyon Dayanımı

No

Uzunluk

6.35mm

Direnç

2.5MOhm

Nominal Vgs

1.9 V

Input Capacitance Ciss Max Vds

3770pF @ 15V

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free

Power Dissipation Max

2.8W Ta 96W Tc

Turn Off Delay Time

17 ns

Reach Svhc

No SVHC

Vgs Max

±20V

Fet Type

N-Channel

Drain To Source Voltage Vdss

25V

Akım Değeri

27A

Input Capacitance

3.77nF

Drain To Source Resistance

3.3mOhm

Rds On Max Id Vgs

2.5mOhm @ 27A, 10V

Gate Charge Qg Max Vgs

47nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric MX

Tedarikçi Cihaz Paketi

DIRECTFET™ MX

Min. Çalışma Sıcaklığı

-40°C

Turn On Delay Time

20 ns