IRF6621TR1

Specifications

Drain To Source Voltage Vdss

30V

Reach Svhc

No SVHC

Vgs Max

±20V

Fet Type

N-Channel

Turn Off Delay Time

16 ns

Rds On Max Id Vgs

9.1mOhm @ 12A, 10V

Reverse Recovery Time

9.8 ns

Drain To Source Resistance

7mOhm

Input Capacitance

1.46nF

Akım Değeri

12A

Maks. Çalışma Sıcaklığı

150°C

Min. Çalışma Sıcaklığı

-40°C

Kılıf / Paket

DirectFET™ Isometric SQ

Tedarikçi Cihaz Paketi

DIRECTFET™ SQ

Gate Charge Qg Max Vgs

17.5nC @ 4.5V

Fall Time Typ

4.1 ns

Gate To Source Voltage Vgs

20V

Yayın Yılı

2005

Continuous Drain Current Id

12A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-40°C~150°C TJ

Power Dissipation

2.2W

Ambalaj

Tape & Reel (TR)

Seri

HEXFET®

Terminal

SMD/SMT

Drain To Source Breakdown Voltage

30V

Montaj Tipi

Surface Mount

Rds On Max

9.1 mΩ

Current Continuous Drain Id25

12A Ta 55A Tc

Pin Sayısı

7

Dual Supply Voltage

30V

Vgsth Max Id

2.25V @ 250μA

Montaj

Surface Mount

Voltage Rated Dc

30V

Nem Hassasiyeti (MSL)

3 (168 Hours)

Rise Time

14ns

Power Dissipation Max

2.2W Ta 42W Tc

Parça Durumu

Obsolete

Kurşunsuz

Lead Free

RoHS Durumu

Non-RoHS Compliant