Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- DirectFET™ Isometric MX
- Turn On Delay Time
- 15 ns
- Gate Charge Qg Max Vgs
- 44nC @ 4.5V
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- Yükseklik
- 508μm
- Voltage Rated Dc
- 30V
- Radyasyon Dayanımı
- No
- Rise Time
- 19ns
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Power Dissipation Max
- 2.8W Ta 89W Tc
- Terminal Pozisyonu
- BOTTOM
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation
- 89W
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 40V
- Pin Sayısı
- 5
- Current Continuous Drain Id25
- 19A Ta 106A Tc
- Montaj Tipi
- Surface Mount
- Vgsth Max Id
- 2.25V @ 250μA
- Avalanche Energy Rating Eas
- 36 mJ
- Montaj
- Surface Mount
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Case Connection
- DRAIN
- Fall Time Typ
- 4.4 ns
- Genişlik
- 5.0546mm
- Continuous Drain Current Id
- 15A
- Yayın Yılı
- 2007
- Turn Off Delay Time
- 21 ns
- Vgs Max
- ±20V
- Fet Type
- N-Channel
- Rds On Max Id Vgs
- 5m Ω @ 19A, 10V
- Akım Değeri
- 19A
- Transistor Application
- SWITCHING
- Jesd30 Code
- R-XBCC-N3
- Uzunluk
- 6.35mm
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