IRF6612TRPBF

Specifications

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Yükseklik

506μm

Drainsource On Resistancemax

0.0033Ohm

Kılıf / Paket

DirectFET™ Isometric MX

Turn On Delay Time

15 ns

Pulsed Drain Currentmax Idm

190A

Gate Charge Qg Max Vgs

45nC @ 4.5V

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Pozisyonu

BOTTOM

Ambalaj

Tape & Reel (TR)

Power Dissipation

89W

Drain To Source Breakdown Voltage

30V

Seri

HEXFET®

Tepe Reflow Süresi (maks. sn)

30

Current Continuous Drain Id25

24A Ta 136A Tc

Pin Sayısı

5

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Vgsth Max Id

2.25V @ 250μA

Avalanche Energy Rating Eas

37 mJ

Voltage Rated Dc

30V

Rise Time

52ns

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Power Dissipation Max

2.8W Ta 89W Tc

Turn Off Delay Time

21 ns

Vgs Max

±20V

Fet Type

N-Channel

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

3.3m Ω @ 24A, 10V

Akım Değeri

24A

Qualification Status

Not Qualified

Terminal Kaplaması

TIN SILVER COPPER

Case Connection

DRAIN

Fall Time Typ

4.8 ns

Continuous Drain Current Id

136mA

Yayın Yılı

2006