IRF6609TR1

Specifications

Voltage Rated Dc

20V

Nem Hassasiyeti (MSL)

3 (168 Hours)

Rise Time

95ns

Power Dissipation Max

1.8W Ta 89W Tc

Parça Durumu

Obsolete

RoHS Durumu

Non-RoHS Compliant

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

6290pF @ 10V

Threshold Voltage

2.45V

Nominal Vgs

2.45 V

Direnç

2mOhm

Çalışma Sıcaklığı

-40°C~150°C TJ

Power Dissipation

2.8W

Ambalaj

Tape & Reel (TR)

Seri

HEXFET®

Drain To Source Breakdown Voltage

20V

Rds On Max

2 mΩ

Montaj Tipi

Surface Mount

Pin Sayısı

7

Current Continuous Drain Id25

31A Ta 150A Tc

Dual Supply Voltage

20V

Vgsth Max Id

2.45V @ 250μA

Montaj

Surface Mount

Min. Çalışma Sıcaklığı

-40°C

Maks. Çalışma Sıcaklığı

150°C

Kılıf / Paket

DirectFET™ Isometric MT

Tedarikçi Cihaz Paketi

DIRECTFET™ MT

Gate Charge Qg Max Vgs

69nC @ 4.5V

Fall Time Typ

9.8 ns

Gate To Source Voltage Vgs

20V

Genişlik

5.05mm

Continuous Drain Current Id

150A

Yayın Yılı

2005

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Drain To Source Voltage Vdss

20V

Reach Svhc

No SVHC

Vgs Max

±20V

Fet Type

N-Channel

Turn Off Delay Time

26 ns

Rds On Max Id Vgs

2mOhm @ 31A, 10V