IRF6608TR1

Specifications

Yayın Yılı

2004

Input Capacitance Ciss Max Vds

2120pF @ 15V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Power Dissipation Max

2.1W Ta 42W Tc

RoHS Durumu

Non-RoHS Compliant

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

3 (168 Hours)

Gate Charge Qg Max Vgs

24nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric ST

Vgsth Max Id

3V @ 250μA

Rds On Max Id Vgs

9m Ω @ 13A, 10V

Montaj Tipi

Surface Mount

Current Continuous Drain Id25

13A Ta 55A Tc

Fet Type

N-Channel

Vgs Max

±12V

Seri

HEXFET®

Çalışma Sıcaklığı

-40°C~150°C TJ

Ambalaj

Tape & Reel (TR)

Drain To Source Voltage Vdss

30V