IRF6607TR1

Specifications

Radyasyon Dayanımı

No

Nem Hassasiyeti (MSL)

3 (168 Hours)

Rise Time

8ns

Parça Durumu

Obsolete

Kurşunsuz

Contains Lead

RoHS Durumu

RoHS Compliant

Power Dissipation Max

3.6W Ta 42W Tc

Threshold Voltage

2V

Input Capacitance Ciss Max Vds

6930pF @ 15V

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-40°C~150°C TJ

Power Dissipation

3.6W

Seri

HEXFET®

Drain To Source Breakdown Voltage

30V

Current Continuous Drain Id25

27A Ta 94A Tc

Pin Sayısı

7

Montaj Tipi

Surface Mount

Rds On Max

3.3 mΩ

Vgsth Max Id

2V @ 250μA

Montaj

Surface Mount

Kılıf / Paket

DirectFET™ Isometric MT

Tedarikçi Cihaz Paketi

DIRECTFET™ MT

Maks. Çalışma Sıcaklığı

150°C

Turn On Delay Time

60 ns

Min. Çalışma Sıcaklığı

-40°C

Gate Charge Qg Max Vgs

75nC @ 4.5V

Gate To Source Voltage Vgs

12V

Fall Time Typ

13 ns

Drive Voltage Max Rds On Min Rds On

4.5V 7V

Continuous Drain Current Id

27A

Yayın Yılı

2005

Drain To Source Voltage Vdss

30V

Turn Off Delay Time

32 ns

Reach Svhc

No SVHC

Fet Type

N-Channel

Vgs Max

±12V

Element Configuration

Single

Contact Plating

Silver

Rds On Max Id Vgs

3.3mOhm @ 25A, 10V

Input Capacitance

6.93nF