IRF6603TR1

Specifications

Current Continuous Drain Id25

27A Ta 92A Tc

Rds On Max Id Vgs

3.4m Ω @ 25A, 10V

Montaj Tipi

Surface Mount

Vgsth Max Id

2.5V @ 250μA

Ambalaj

Tape & Reel (TR)

Drain To Source Voltage Vdss

30V

Çalışma Sıcaklığı

-40°C~150°C TJ

Seri

HEXFET®

Fet Type

N-Channel

Vgs Max

+20V, -12V

Parça Durumu

Obsolete

Power Dissipation Max

3.6W Ta 42W Tc

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yayın Yılı

2005

Input Capacitance Ciss Max Vds

6590pF @ 15V

Kılıf / Paket

DirectFET™ Isometric MT

Gate Charge Qg Max Vgs

72nC @ 4.5V

Nem Hassasiyeti (MSL)

3 (168 Hours)