IRF640NSTRLPBF

Specifications

Transistor Element Material

SILICON

Terminal Sayısı

2

Input Capacitance Ciss Max Vds

1160pF @ 25V

Nominal Vgs

4 V

Threshold Voltage

4V

Uzunluk

10.668mm

Jesd30 Code

R-PSSO-G2

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Terminal Formu

GULL WING

Dual Supply Voltage

200V

Çalışma Sıcaklığı

-55°C~175°C TJ

JESD-609 Kodu

e3

Fall Time Typ

5.5 ns

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Yayın Yılı

2004

Continuous Drain Current Id

18A

Genişlik

9.65mm

Rds On Max Id Vgs

150m Ω @ 11A, 10V

Tepe Reflow Sıcaklığı (°C)

260

Akım Değeri

18A

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Fet Type

N-Channel

Vgs Max

±20V

Turn Off Delay Time

23 ns

Number Of Channels

1

Power Dissipation Max

150W Tc

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead, Lead Free

Parça Durumu

Active

Direnç

150mOhm

Radyasyon Dayanımı

No

Voltage Rated Dc

200V

Rise Time

19ns

Recovery Time

251 ns

Max Junction Temperature Tj

175°C