IRF640NPBF

Specifications

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Fet Type

N-Channel

Vgs Max

±20V

Turn Off Delay Time

23 ns

Rds On Max Id Vgs

150m Ω @ 11A, 10V

Tepe Reflow Sıcaklığı (°C)

250

Akım Değeri

18A

Fall Time Typ

5.5 ns

Case Connection

DRAIN

Genişlik

4.826mm

Continuous Drain Current Id

18A

Yayın Yılı

1999

Çalışma Sıcaklığı

-55°C~175°C TJ

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Dual Supply Voltage

200V

Uzunluk

10.668mm

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

1160pF @ 25V

Threshold Voltage

2V

Nominal Vgs

4 V

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Element Configuration

Single

Contact Plating

Tin

Yükseklik

19.8mm

Pulsed Drain Currentmax Idm

72A

Turn On Delay Time

10 ns

Kılıf / Paket

TO-220-3

Gate Charge Qg Max Vgs

67nC @ 10V

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

150W

Ambalaj

Tube

Seri

HEXFET®