IRF630NSTRRPBF

Specifications

Yükseklik

4.826mm

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

7.9 ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge Qg Max Vgs

35nC @ 10V

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

3

Current Continuous Drain Id25

9.3A Tc

Montaj

Surface Mount

Vgsth Max Id

4V @ 250μA

Avalanche Energy Rating Eas

94 mJ

Power Dissipation

82W

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

200V

Seri

HEXFET®

Power Dissipation Max

82W Tc

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Parça Durumu

Discontinued

Radyasyon Dayanımı

No

Voltage Rated Dc

200V

Rise Time

14ns

Rds On Max Id Vgs

300m Ω @ 5.4A, 10V

Tepe Reflow Sıcaklığı (°C)

260

Akım Değeri

9.3A

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs Max

±20V

Fet Type

N-Channel

Turn Off Delay Time

27 ns

Fall Time Typ

15 ns

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Continuous Drain Current Id

9.3A

Yayın Yılı

2005

Genişlik

9.65mm

Number Of Elements

1