IRF630NSTRLPBF

Specifications

Direnç

300mOhm

Parça Durumu

Active

Kurşunsuz

Contains Lead, Lead Free

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

82W Tc

Rise Time

14ns

Voltage Rated Dc

200V

Radyasyon Dayanımı

No

Avalanche Energy Rating Eas

94 mJ

Vgsth Max Id

4V @ 250μA

Montaj

Surface Mount

Current Continuous Drain Id25

9.3A Tc

Pin Sayısı

3

Tepe Reflow Süresi (maks. sn)

30

Montaj Tipi

Surface Mount

Seri

HEXFET®

Drain To Source Breakdown Voltage

200V

Ambalaj

Tape & Reel (TR)

Power Dissipation

82W

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

35nC @ 10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time

7.9 ns

Yükseklik

4.826mm

Reach Svhc

No SVHC

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Nominal Vgs

4 V

Input Capacitance Ciss Max Vds

575pF @ 25V

Terminal Sayısı

2

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G2

Uzunluk

10.668mm

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1