IRF60R217

Specifications

Case Connection

DRAIN

Continuous Drain Current Id

58A

Yayın Yılı

2013

Drive Voltage Max Rds On Min Rds On

6V 10V

Pulsed Drain Currentmax Idm

217A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge Qg Max Vgs

66nC @ 10V

Rds On Max Id Vgs

9.9m Ω @ 35A, 10V

Ds Breakdown Voltagemin

60V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0099Ohm

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

60V

Vgs Max

±20V

Fet Type

N-Channel

Transistor Element Material

SILICON

Power Dissipation Max

83W Tc

Terminal Sayısı

2

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

2170pF @ 25V

Jedec95 Code

TO-252AA

Jesd30 Code

R-PSSO-G2

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Current Continuous Drain Id25

58A Tc

Fabrika Tedarik Süresi

12 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Terminal Formu

GULL WING

Avalanche Energy Rating Eas

124 mJ

Vgsth Max Id

3.7V @ 50μA

Montaj

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE