IRF60B217

Specifications

Continuous Drain Current Id

60A

Yayın Yılı

2013

Drive Voltage Max Rds On Min Rds On

6V 10V

Pulsed Drain Currentmax Idm

225A

Kılıf / Paket

TO-220-3

Gate Charge Qg Max Vgs

66nC @ 10V

Rds On Max Id Vgs

9m Ω @ 36A, 10V

Ds Breakdown Voltagemin

60V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.009Ohm

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

60V

Vgs Max

±20V

Fet Type

N-Channel

Transistor Element Material

SILICON

Power Dissipation Max

83W Tc

Terminal Sayısı

3

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

2230pF @ 25V

Jedec95 Code

TO-220AB

Jesd30 Code

R-PSFM-T3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

Not Applicable

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Current Continuous Drain Id25

60A Tc

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Avalanche Energy Rating Eas

124 mJ

Vgsth Max Id

3.7V @ 50μA

Montaj

Through Hole

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

StrongIRFET™