IRF5803D2TRPBF

Specifications

Rds On Max Id Vgs

112m Ω @ 3.4A, 10V

Yükseklik

1.4986mm

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

88 ns

Reach Svhc

No SVHC

Fet Type

P-Channel

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Fall Time Typ

50 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Genişlik

3.9878mm

Yayın Yılı

2001

Continuous Drain Current Id

3.4A

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time

43 ns

Gate Charge Qg Max Vgs

37nC @ 10V

Current Continuous Drain Id25

3.4A Ta

Pin Sayısı

8

Number Of Elements

1

Montaj Tipi

Surface Mount

Vgsth Max Id

3V @ 250μA

Montaj

Surface Mount

Dual Supply Voltage

40V

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

2W

Terminal

SMD/SMT

Seri

FETKY™

Drain To Source Breakdown Voltage

-40V

Configuration

Single

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free

Power Dissipation Max

2W Ta

Threshold Voltage

3V

Nominal Vgs

3 V

Input Capacitance Ciss Max Vds

1110pF @ 25V

Fet Feature

Schottky Diode (Isolated)

Radyasyon Dayanımı

No

Uzunluk

4.9784mm