IRF5802TRPBF

Specifications

Yükseklik

900μm

Contact Plating

Tin

Reach Svhc

No SVHC

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

30V

Gate Charge Qg Max Vgs

6.8nC @ 10V

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Pulsed Drain Currentmax Idm

7A

Turn On Delay Time

6 ns

Vgsth Max Id

5.5V @ 250μA

Avalanche Energy Rating Eas

9.5 mJ

Montaj

Surface Mount

Pin Sayısı

6

Current Continuous Drain Id25

900mA Ta

Montaj Tipi

Surface Mount

Terminal

SMD/SMT

Seri

HEXFET®

Drain To Source Breakdown Voltage

150V

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Power Dissipation

2W

Direnç

1.2Ohm

Parça Durumu

Active

Kurşunsuz

Contains Lead

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

2W Ta

Rise Time

1.6ns

Voltage Rated Dc

150V

Radyasyon Dayanımı

No

Akım Değeri

900mA

Rds On Max Id Vgs

1.2 Ω @ 540mA, 10V

Turn Off Delay Time

7.5 ns

Vgs Max

±30V

Fet Type

N-Channel

Genişlik

1.4986mm

Yayın Yılı

2001

Continuous Drain Current Id

900mA

Fall Time Typ

9.2 ns