Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Direnç
- 26.5MOhm
- Power Dissipation Max
- 92W Tc
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Rise Time
- 51ns
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- 100V
- Montaj
- Through Hole
- Vgsth Max Id
- 4V @ 250μA
- Montaj Tipi
- Through Hole
- Tepe Reflow Süresi (maks. sn)
- 30
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 36A Tc
- Drain To Source Breakdown Voltage
- 100V
- Seri
- HEXFET®
- Power Dissipation
- 92W
- Ambalaj
- Tube
- Drive Voltage Max Rds On Min Rds On
- 10V
- Gate To Source Voltage Vgs
- 20V
- Gate Charge Qg Max Vgs
- 63nC @ 10V
- Turn On Delay Time
- 15 ns
- Kılıf / Paket
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Yükseklik
- 9.65mm
- Element Configuration
- Single
- Reach Svhc
- No SVHC
- Operating Mode
- ENHANCEMENT MODE
- Input Capacitance Ciss Max Vds
- 1770pF @ 25V
- Nominal Vgs
- 4 V
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Uzunluk
- 10.668mm
- Transistor Application
- SWITCHING
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 12 Weeks
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Yayın Yılı
- 2010
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