Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 11 ns
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge Qg Max Vgs
- 71nC @ 10V
- Contact Plating
- Tin
- Yükseklik
- 4.826mm
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- Element Configuration
- Single
- Power Dissipation Max
- 130W Tc
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Direnç
- 44MOhm
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- 100V
- Rise Time
- 35ns
- Montaj Tipi
- Surface Mount
- Recovery Time
- 170 ns
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 33A Tc
- Tepe Reflow Süresi (maks. sn)
- 30
- Vgsth Max Id
- 4V @ 250μA
- Montaj
- Surface Mount
- Power Dissipation
- 130W
- Ambalaj
- Tape & Reel (TR)
- Seri
- HEXFET®
- Terminal
- SMD/SMT
- Drain To Source Breakdown Voltage
- 100V
- Fall Time Typ
- 35 ns
- Case Connection
- DRAIN
- Genişlik
- 9.65mm
- Continuous Drain Current Id
- 33A
- Yayın Yılı
- 1997
- Rds On Max Id Vgs
- 44m Ω @ 16A, 10V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Akım Değeri
- 33A
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Vgs Max
- ±20V
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