IRF530NPBF

Specifications

Akım Değeri

17A

Rds On Max Id Vgs

90m Ω @ 9A, 10V

Tepe Reflow Sıcaklığı (°C)

250

Fet Type

N-Channel

Vgs Max

±20V

Turn Off Delay Time

35 ns

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Yayın Yılı

2001

Continuous Drain Current Id

17A

Genişlik

4.69mm

Fall Time Typ

25 ns

Case Connection

DRAIN

Dual Supply Voltage

100V

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

920pF @ 25V

Nominal Vgs

4 V

Transistor Element Material

SILICON

Terminal Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Uzunluk

10.5156mm

Transistor Application

SWITCHING

Yükseklik

8.77mm

Contact Plating

Tin

Element Configuration

Single

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

37nC @ 10V

Turn On Delay Time

9.2 ns

Pulsed Drain Currentmax Idm

60A

Lead Pitch

2.54mm

Kılıf / Paket

TO-220-3

Montaj

Through Hole

Vgsth Max Id

4V @ 250μA

Recovery Time

140 ns