IRF5210STRLPBF

Specifications

Additional Feature

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Turn Off Delay Time

72 ns

Vgs Max

±20V

Fet Type

P-Channel

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

60m Ω @ 38A, 10V

Akım Değeri

-40A

Case Connection

DRAIN

Fall Time Typ

55 ns

Genişlik

9.65mm

Continuous Drain Current Id

-40A

Yayın Yılı

1998

Çalışma Sıcaklığı

-55°C~150°C TJ

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Dual Supply Voltage

100V

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G2

Uzunluk

10.668mm

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

2

Transistor Element Material

SILICON

Threshold Voltage

-4V

Nominal Vgs

-4 V

Input Capacitance Ciss Max Vds

2780pF @ 25V

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Element Configuration

Single

Contact Plating

Tin

Yükseklik

4.83mm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time

14 ns

Gate Charge Qg Max Vgs

230nC @ 10V

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Ambalaj

Tape & Reel (TR)

Power Dissipation

3.8W