IRF5210LPBF

Specifications

Genişlik

4.69mm

Continuous Drain Current Id

-40A

Yayın Yılı

1998

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection

DRAIN

Fall Time Typ

55 ns

Akım Değeri

-40A

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

60m Ω @ 38A, 10V

Turn Off Delay Time

72 ns

Vgs Max

±20V

Fet Type

P-Channel

Additional Feature

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Threshold Voltage

4V

Nominal Vgs

4 V

Input Capacitance Ciss Max Vds

2780pF @ 25V

Terminal Sayısı

3

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Uzunluk

10.54mm

Dual Supply Voltage

100V

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

230nC @ 10V

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Turn On Delay Time

14 ns

Yükseklik

9.652mm

Reach Svhc

No SVHC

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Direnç

60mOhm

Parça Durumu

Active

Kurşunsuz

Contains Lead

RoHS Durumu

ROHS3 Compliant