IRF520NSTRLPBF

Specifications

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Reach Svhc

Unknown

Yükseklik

4.826mm

Drainsource On Resistancemax

0.2Ohm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time

4.5 ns

Gate Charge Qg Max Vgs

25nC @ 10V

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Ambalaj

Tape & Reel (TR)

Power Dissipation

3.8W

Drain To Source Breakdown Voltage

100V

Seri

HEXFET®

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

3

Current Continuous Drain Id25

9.7A Tc

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Vgsth Max Id

4V @ 250μA

Voltage Rated Dc

100V

Radyasyon Dayanımı

No

Rise Time

23ns

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead

Parça Durumu

Active

Power Dissipation Max

3.8W Ta 48W Tc

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Turn Off Delay Time

32 ns

Vgs Max

±20V

Fet Type

N-Channel

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

200m Ω @ 5.7A, 10V

Akım Değeri

9.7A

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection

DRAIN

Fall Time Typ

23 ns

Yayın Yılı

1995

Continuous Drain Current Id

9.7A

Genişlik

9.65mm