Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 48W
- Ambalaj
- Tube
- Drain To Source Breakdown Voltage
- 100V
- Seri
- HEXFET®
- Recovery Time
- 150 ns
- Montaj Tipi
- Through Hole
- Current Continuous Drain Id25
- 9.7A Tc
- Pin Sayısı
- 3
- Montaj
- Through Hole
- Vgsth Max Id
- 4V @ 250μA
- Radyasyon Dayanımı
- No
- Jedec95 Code
- TO-220AB
- Voltage Rated Dc
- 100V
- Rise Time
- 23ns
- Power Dissipation Max
- 48W Tc
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Element Configuration
- Single
- Reach Svhc
- No SVHC
- Contact Plating
- Tin
- Drainsource On Resistancemax
- 0.2Ohm
- Yükseklik
- 15.24mm
- Turn On Delay Time
- 4.5 ns
- Lead Pitch
- 2.54mm
- Kılıf / Paket
- TO-220-3
- Gate Charge Qg Max Vgs
- 25nC @ 10V
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 12 Weeks
- Dual Supply Voltage
- 100V
- Uzunluk
- 10.5156mm
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
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