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RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Kurşunsuz
- Contains Lead
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation Max
- 170W Tc
- Number Of Channels
- 1
- Direnç
- 20mOhm
- Voltage Rated Dc
- -55V
- Radyasyon Dayanımı
- No
- Rise Time
- 99ns
- Current Continuous Drain Id25
- 42A Tc
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 30
- Montaj Tipi
- Surface Mount
- Max Junction Temperature Tj
- 150°C
- Recovery Time
- 92 ns
- Vgsth Max Id
- 4V @ 250μA
- Montaj
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation
- 3.8W
- Seri
- HEXFET®
- Terminal
- SMD/SMT
- Drain To Source Breakdown Voltage
- -55V
- Gate To Source Voltage Vgs
- 20V
- Manufacturer Package Identifier
- D2Pak
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pulsed Drain Currentmax Idm
- 280A
- Turn On Delay Time
- 20 ns
- Gate Charge Qg Max Vgs
- 180nC @ 10V
- Contact Plating
- Tin
- Yükseklik
- 4.83mm
- Drain To Source Voltage Vdss
- 55V
- Operating Mode
- ENHANCEMENT MODE
- Reach Svhc
- No SVHC
- Element Configuration
- Single
- Terminal Sayısı
- 2
- Transistor Element Material
- SILICON
- Threshold Voltage
- -2V
- Nominal Vgs
- -4 V
- Input Capacitance Ciss Max Vds
- 3500pF @ 25V
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