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IRF4104PBF

Infineon Technologies

IRF4104PBF

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Gate Charge Qg Max Vgs
100nC @ 10V
Kılıf / Paket
TO-220-3
Turn On Delay Time
16 ns
Pulsed Drain Currentmax Idm
470A
Drive Voltage Max Rds On Min Rds On
10V
Gate To Source Voltage Vgs
20V
Element Configuration
Single
Reach Svhc
No SVHC
Operating Mode
ENHANCEMENT MODE
Yükseklik
9.017mm
Rise Time
130ns
Voltage Rated Dc
40V
Radyasyon Dayanımı
No
Jedec95 Code
TO-220AB
Direnç
5.5MOhm
Kurşunsuz
Lead Free
RoHS Durumu
ROHS3 Compliant
Parça Durumu
Active
Power Dissipation Max
140W Tc
Drain To Source Breakdown Voltage
40V
Seri
HEXFET®
Ambalaj
Tube
Power Dissipation
140W
Montaj
Through Hole
Vgsth Max Id
4V @ 250μA
Avalanche Energy Rating Eas
220 mJ
Current Continuous Drain Id25
75A Tc
Pin Sayısı
3
Recovery Time
35 ns
Montaj Tipi
Through Hole
Yayın Yılı
2003
Continuous Drain Current Id
75A
Genişlik
4.826mm
Case Connection
DRAIN
Fall Time Typ
77 ns
Turn Off Delay Time
38 ns
Fet Type
N-Channel
Vgs Max
±20V
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Akım Değeri
75A

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