Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Direnç
- 6MOhm
- Power Dissipation Max
- 3.1W Ta 120W Tc
- Parça Durumu
- Obsolete
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz
- Lead Free
- Rise Time
- 220ns
- Jedec95 Code
- TO-220AB
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- 20V
- Vgsth Max Id
- 3V @ 250μA
- Avalanche Energy Rating Eas
- 460 mJ
- Montaj
- Through Hole
- Montaj Tipi
- Through Hole
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 110A Tc
- Seri
- HEXFET®
- Terminal
- Through Hole
- Drain To Source Breakdown Voltage
- 20V
- Power Dissipation
- 120W
- Ambalaj
- Tube
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Gate To Source Voltage Vgs
- 20V
- Gate Charge Qg Max Vgs
- 44nC @ 4.5V
- Pulsed Drain Currentmax Idm
- 440A
- Turn On Delay Time
- 12 ns
- Kılıf / Paket
- TO-220-3
- Yükseklik
- 8.763mm
- Reach Svhc
- No SVHC
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Input Capacitance Ciss Max Vds
- 2980pF @ 10V
- Threshold Voltage
- 3V
- Nominal Vgs
- 3 V
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Uzunluk
- 10.5156mm
- Transistor Application
- SWITCHING
- Dual Supply Voltage
- 20V
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