IRF3710LPBF

Specifications

Fall Time Typ

47 ns

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Yayın Yılı

2004

Continuous Drain Current Id

57A

Genişlik

4.826mm

Drain Currentmax Abs Id

49A

Rds On Max Id Vgs

23m Ω @ 28A, 10V

Tepe Reflow Sıcaklığı (°C)

260

Akım Değeri

57A

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Vgs Max

±20V

Fet Type

N-Channel

Turn Off Delay Time

45 ns

Transistor Element Material

SILICON

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

3130pF @ 25V

Uzunluk

10.668mm

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Number Of Elements

1

Fabrika Tedarik Süresi

14 Weeks

Çalışma Sıcaklığı

-55°C~175°C TJ

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

12 ns

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate Charge Qg Max Vgs

130nC @ 10V

Yükseklik

9.65mm

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Power Dissipation Max

200W Tc

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Parça Durumu

Not For New Designs

Direnç

23MOhm

Radyasyon Dayanımı

No

Voltage Rated Dc

100V