IRF3709ZSTRRPBF

Specifications

Gate Charge Qg Max Vgs

26nC @ 4.5V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time

13 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Yükseklik

4.826mm

Rise Time

41ns

Radyasyon Dayanımı

No

Direnç

6.3MOhm

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Power Dissipation Max

79W Tc

Seri

HEXFET®

Drain To Source Breakdown Voltage

30V

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Power Dissipation

79W

Avalanche Energy Rating Eas

60 mJ

Vgsth Max Id

2.25V @ 250μA

Montaj

Surface Mount

Current Continuous Drain Id25

87A Tc

Pin Sayısı

3

Tepe Reflow Süresi (maks. sn)

30

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

42A

Genişlik

9.65mm

Continuous Drain Current Id

87A

Yayın Yılı

2001

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection

DRAIN

Fall Time Typ

4.7 ns

Turn Off Delay Time

16 ns

Fet Type

N-Channel

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

6.3m Ω @ 21A, 10V

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)